Patternable solution-crystallized organic transistors are developed with very high carrier mobilities that exceed 10 cm(2) V (1) s (1). The devices feature a newly synthesized air-stable compound 2,9-didecyldi-naphtho[2,3-b: 2', 3'-f] thieno[3,2-b] thiophene (C-10-DNTT) and are formed from hot solution. A method of oriented growth is introduced to obtain the single-crystalline films of C-10-DNTT, regulating the crystallizing direction and the positions in a single process.