In this work, we report the formation of CuInS2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In2S3) at 300 and 350 degrees C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3x10(-8) to 3 Omega(-1) cm(-1) depending on the thickness of the CuS film. CIS films showed p-type conductivity. (C) 2010 Elsevier B.V. All rights reserved.