Applied Surface Science, Vol.257, No.15, 6850-6857, 2011
Synthesis of ultrafine single crystals and nanostructured coatings of indium oxide from solution precursor
Indium oxide (In2O3) has been widely used in sensors, solar cells and microelectronics. There are several techniques available for making In2O3 such as vapor, electrochemical and atomic layer deposition, which are not only expensive but also time consuming processes. In this study, an inexpensive and straightforward synthesis approach is being presented to make micron/submicron size single crystals as well as nanostructured adherent coatings of In2O3 using Indium Chloride (InCl3) powders and InCl3 solution precursor. Both the powders and the solution precursor were calcined in a furnace to obtain the crystals; however, the liquid precursor was also treated by a DC plasma jet to obtain the nanostructured coatings. The phase transformations during thermal decomposition of InCl3 powders and solution precursor were investigated via differential scanning calorimetry studies. The phase structure and crystallinity of the crystals and coatings were confirmed by X-ray diffraction. Microstructural characterization of the crystals and coatings was done by scanning electron microscopy, transmission electron microscopy and atomic force microscopy techniques. Size of the crystals was observed to be dependent on the heating schemes adapted during calcination. Solution precursor plasma sprayed In2O3 coatings showed porosity and ultrafine particulates with grain size ranging between 10 and 75 nm. Resistivity was determined to be similar to 0.553 +/- 0.337 k Omega cm. Optical transmittance of In2O3 coatings was similar to 60-78% in the visible region and it was observed to decrease with increasing the number passes or the thickness of the coatings. Based on the optical transmission data, direct band gap of 3.57 eV was determined. (C) 2011 Elsevier B. V. All rights reserved.
Keywords:Indium oxide;Plasma spray;Solution precursor;Single crystals;Resistivity;Optical properties;Band gap