Tin-doped indium oxide (ITO) films with 200nm thickness were deposited on glass substrates by DC magnetron sputtering at room temperature. And they were annealed by rapid thermal annealing (RTA) method in vacuum ambient at different temperature for 60 s. The effect of annealing temperature on the structural, electrical and optical properties of ITO films was investigated. As the RTA temperature increases, the resistivity of ITO films decreases dramatically, and the transmittance in the visible region increases obviously. The ITO film annealed at 600 degrees C by RTA in vacuum shows a resistivity of 1.6 x 10(-4) Omega cm and a transmittance of 92%. (C) 2011 Elsevier B.V. All rights reserved.