Applied Surface Science, Vol.257, No.18, 8110-8112, 2011
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38 +/- 0.15 eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43 +/- 0.15 eV was obtained. (C) 2011 Elsevier B.V. All rights reserved.