A control of interface between gate insulating film and semiconductor is required to achieve high-power field effect transistors (FET) using SiC. To improve the interface between the high-k layer and SiC, we propose inserting an AlN layer as an interfacial layer. The reason for selecting AlN film is that it has a wide bandgap, as well as almost the same lattice constant as that of 4H-SiC. The insertion of AlN film between 4H-SiC and the insulating film effectively reduces the interfacial roughness. The roughness of the interface between AlN and SiC can be suppressed compared with that of the thermal oxidized SiC. Moreover, the AlSiON film was deposited on the AlN layer as a high dielectric gate insulating film with low leakage current at high temperature and low space charge. The C-V characteristics of the AlSiON/AlN/SiC MIS structure with an AlN buffer layer are improved by increasing the deposition temperature of the AlN film. This demonstrates that AlSiON/AlN/SiC is one of attractive MIS structures for SiC devices. (C) 2011 Elsevier B. V. All rights reserved.