The trace elements distribution in Cu-Si alloys is analyzed after mixing Si with Cu. The mass balance and atomic distribution showed that the highest concentration of trace elements was at the phase boundaries between Si and Cu-Si intermetallic. The concentrations of 21 trace elements in the refined Si were below detection limit of the ICP technique where 11 elements were below 1ppm(at) and another 7 elements were below 2ppm(at). The amount of other elements decreased several times in the refined Si, compared to that in initial metallurgical grade silicon. The level of trace elements in refined Si allows utilization of the Si photo-catalytic characteristics for solar energy generation. (C) 2011 Elsevier B.V. All rights reserved.