Chemistry Letters, Vol.40, No.4, 410-411, 2011
Synthesis and Characterization of Semiconducting Boron-doped Amorphous Carbon Materials Using an Organic Boron Compound as a Precursor
Boron-doped amorphous carbon was synthesized by polymerizing naphthalene and triphenylborane with subsequent heat treatment by spark plasma sintering. The boron-doped carbon material has negative Seebeck coefficient (-0.22 mV K-1 which indicates the carbon material functions as an n-type semiconductor.