Strain-free AlGaN/GaN 자외선 센서용 나노선 소자 연구

안재희; 김지현; Jaehui Ahn; Jihyun Kim

Korean Chemical Engineering Research, Vol.50, No.1, 72-75, February, 2012

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Strain-free AlGaN/GaN 자외선 센서용 나노선 소자 연구

Strain-free AlGaN/GaN Nanowires for UV Sensor Applications

안재희, 김지현 ^†

고려대학교 화공생명공학과, 136-701 서울시 성북구 안암로 145

Jaehui Ahn, and Jihyun Kim^†

Department of Chemical & Biological Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 136-713, Korea

E-mail:

초록

Strain-free AlGaN/GaN 나노선을 기판에 분산시킨 후 E-beam lithography(EBL)를 이용해 단일 나노선 자외선 센서를 제작하였다. 나노선의 구조적, 광학적 특성을 분석하기 위해 focused ion beam(FIB), photoluminescence, micro-Raman spectroscopy를 이용하여 나노선의 strain 및 형태를 조사하였다. 자외선 센서로서의 특성 여부를 확인하기 위하여 빛을 차단 한 조건과 자외선을 조사하는 조건하에서 current-voltage(I-V) 특성을 측정하였으며 각각 9.0 μS과 9.5 μS의 전기전도도(conductance)를 얻었다. 자외선 조사 조건하에서 excess carrier의 증가로 인해 전기전도도가 약 5%가 향상되었음을 알 수 있었다. 자외선을 반복적으로 조사하는 과정의 실험을 통해 우수한 포화 시간(saturation time)과 감쇠 시간(decay time)을 얻었다. 따라서 AlGaN/GaN 나노선은 자외선 센서로서 많은 가능성을 가지고 있음을 확인하였다.

In our experiments, strain-free nanowires(NWs) were dispersed on to the substrate, followed by e-beam lithography(EBL) to fabricate single nanowire ultraviolet(UV) sensor devices. Focused-ion beam(FIB), micro-Raman spectroscopy and photoluminescence were employed to characterize the structural and optical properties of AlGaN/GaN NWs. Also, I-V characteristics were obtained under both dark condition and UV lamp to demonstrate AlGaN/GaN NWbased UV sensors. The conductance of a single AlGaN/GaN UV sensor was 9.0 μS(under dark condition) and 9.5 μS (under UV lamp), respectively. The currents were enhanced by excess carriers under UV lamp. Fast saturation and decay time were demonstrated by the cycled processes between UV lamp and dark condition. Therefore, we believe that AlGaN/GaN NWs have a great potential for UV sensor applications.

Keywords:GaN;Nanowire;Sensor

[References]

Ponce FA, Bour DP, Nature, 386(6623), 351 (1997)
Watanabe K, Taniguchi T, Kanda H, Nature Materials., 3, 404 (2004)
Horiuchi N, Nature Photonics., 4, 738 (2010)
Huang Y, Duan XF, Cui Y, Lieber CM, Nano Lett., 2, 101 (2002)
Simpkins BS, Pehrsson PE, Laracuente AR, Appl. Phys. Lett., 88, 072111 (2006)
Hersee SD, Sun X, Wang X, Nano Lett., 6, 1808 (2006)
Gottschalch V, Wagner G, Bauer J, Paetzelt H, Shirnow M, J. Cryst. Growth, 310(23), 5123 (2008)
Parish G, Keller S, Kozodoy P, Ibbetson JP, Marchand H, Fini PT, Fleischer SB, Denbaars SP. Mishra UK, Appl. Phys.Lett., 75, 247 (1999)
Waltereit P, Brandt O, Trampert A, Grahn HT, Menniger J, Ramsteiner M, Reiche M, Ploog KH, Nature., 406, 865 (2000)
Adivarahan V, Tamulaitis G, Srinivasan R, Yang J, Khan MA, Shur MS, Gaska R, Simin G, Appl. Phys. Lett., 79, 1903 (2001)
Lee JW, Moon KJ, Ham MH, Myoung JM, Solid State Communications., 148, 194 (2008)
Pau JL, Anduaga J, Rivera C, Navarro A, Alava I, Redondo M, Munoz E, Appl.Optics., 45, 7498 (2006)
Chin AH, Ahn TS, Li H, Vaddiraju S, Bardeen CJ, Ning CZ, Sunkara MK, Nano Lett., 7, 626 (2007)
Weber, W. H., “Raman Scattering in Materials Science,” Springer, Berlin (2000)
Li Y, Xiang J, Qian F, Gradeeak S, Wu Y, Yan H, Blom DA, Lieber CM, Nano Lett., 6, 1468 (2006)
Qian F, Li Y, Gradeeak S, Wang D, Barrelet CJ, Lieber CM, Nano Lett., 4, 1975 (2004)
Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager JW, Jones E, Liliental-Weber Z, Rubin M, Weber ER, Bremser MD, Davis RF, Phys. Review B., 54, 17745 (1996)

[Related Articles]

[1] Ponce FA, Bour DP, Nature, 386(6623), 351 (1997)

[2] Watanabe K, Taniguchi T, Kanda H, Nature Materials., 3, 404 (2004)

[3] Horiuchi N, Nature Photonics., 4, 738 (2010)

[4] Huang Y, Duan XF, Cui Y, Lieber CM, Nano Lett., 2, 101 (2002)

[5] Simpkins BS, Pehrsson PE, Laracuente AR, Appl. Phys. Lett., 88, 072111 (2006)

[6] Hersee SD, Sun X, Wang X, Nano Lett., 6, 1808 (2006)

[7] Gottschalch V, Wagner G, Bauer J, Paetzelt H, Shirnow M, J. Cryst. Growth, 310(23), 5123 (2008)

[8] Parish G, Keller S, Kozodoy P, Ibbetson JP, Marchand H, Fini PT, Fleischer SB, Denbaars SP. Mishra UK, Appl. Phys.Lett., 75, 247 (1999)

[9] Waltereit P, Brandt O, Trampert A, Grahn HT, Menniger J, Ramsteiner M, Reiche M, Ploog KH, Nature., 406, 865 (2000)

[10] Adivarahan V, Tamulaitis G, Srinivasan R, Yang J, Khan MA, Shur MS, Gaska R, Simin G, Appl. Phys. Lett., 79, 1903 (2001)

[11] Lee JW, Moon KJ, Ham MH, Myoung JM, Solid State Communications., 148, 194 (2008)

[12] Pau JL, Anduaga J, Rivera C, Navarro A, Alava I, Redondo M, Munoz E, Appl.Optics., 45, 7498 (2006)

[13] Chin AH, Ahn TS, Li H, Vaddiraju S, Bardeen CJ, Ning CZ, Sunkara MK, Nano Lett., 7, 626 (2007)

[14] Weber, W. H., “Raman Scattering in Materials Science,” Springer, Berlin (2000)

[15] Li Y, Xiang J, Qian F, Gradeeak S, Wu Y, Yan H, Blom DA, Lieber CM, Nano Lett., 6, 1468 (2006)

[16] Qian F, Li Y, Gradeeak S, Wang D, Barrelet CJ, Lieber CM, Nano Lett., 4, 1975 (2004)

[17] Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager JW, Jones E, Liliental-Weber Z, Rubin M, Weber ER, Bremser MD, Davis RF, Phys. Review B., 54, 17745 (1996)