A self-aligned Ni-InGaAs metallic source and drain (S/D) technology for In0.7Ga0.3As channel n-MOSFETs (metal-oxide-semiconductor field-effect transistors) is reported. A process was developed for selective contact metallization on InGaAs, comprising a reaction of Ni with InxGa1-xAs to form a metallic Ni-InGaAs material, and a selective removal of excess Ni using a wet etch. Ni-InGaAs has low sheet resistance, is ohmic on n-InxGa1-xAs, and forms a Schottky contact on p-InxGa1-xAs. A self-aligned salicidelike integration scheme was used to realize In0.7Ga0.3As n-MOSFETs with self-aligned Ni-InGaAs metal S/D. n-MOSFETs with a gate length of 1 mu m shows good transfer characteristics with an on-state/off-state drain current ratio of similar to 10(3) and peak transconductance G(m) of 74 mu S/mu m. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3516213] All rights reserved.