We fabricated high-performance thin-film transistors (TFTs) with a silicon-indium-zinc-oxide (SIZO ) channel layer deposited by radio frequency sputtering at room temperature. The SIZO-TFTs passivated with poly (methyl methacrylate) showed a field effect mobility of 8 cm(2)/V . s and a subthreshold swing of 90 mV/decade even with a process temperature below 150 degrees C. Si acted as a stabilizer and carrier suppressor in the In-Zn-O system. In addition, the temperature and bias-induced stability of SIZO-TFTs along with oxygen effects are experimentally studied. (C) 2010 The Electrochemical Society. (DOI: 10.1149/1.3518518) All rights reserved.