We have developed a high performance, transparent bottom gate inkjet printed zinc tin oxide (ZTO) thin-film transistor (TFT) at the maximum process temperature of 300 degrees C. The transparent ZTO TFT inkjet printed at the substrate temperature of 90 degrees C exhibited a field-effect mobility of 1.8 cm(2) V-1 s(-1), on/off ratio of similar to 10(7), and gate swing of 288 mV/dec. The evolution of the threshold voltage with bias-stress time follows a stretched exponential behavior, indicating that the shift is mainly due to the carrier trapping at the interface region. The high performance and good stability appear to be due to the presence of Cl in the ZTO remained from the precursors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3516608] All rights reserved.