Ultrathin VO2 films were grown on Si(001) substrates by the electrodeposition technique. The method includes the annealing of a xerogel precursor deposit, mainly composed of V2O5, at 500 degrees C. The effective formation of the monoclinic VO2 phase, after annealing, is strongly dependent on the time of storage in air. The VO2 films so obtained have [011]-preferred orientation and undergo a metal-insulator transition. The resistance change as a function of temperature is characterized by a broad hysteresis where two transition temperatures can be identified: T-1 approximate to 55 degrees C and T-2 approximate to 77.5 degrees C. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3525275] All rights reserved.