Copper (I) amidinate [Cu(i-Pr-Me-AMD)](2) was investigated to produce copper films in conventional low pressure chemical vapor deposition (CVD) using hydrogen as reducing gas-reagent. Copper films were deposited on steel, silicon, and SiO2/Si substrates in the temperature range 200-350 degrees C at a total pressure of 1333 Pa. The growth rate on steel follows the surface reaction between atomic hydrogen and the entire precursor molecule up to 240 degrees C. A significant increase of the growth rate at temperatures higher than 300 degrees C was attributed to thermal decomposition of the precursor molecule. It is shown that [Cu(i-Pr-Me-AMD)](2) meets the specifications for the metal organic chemical vapor deposition of Cu-based alloy coatings containing oxophilic elements such as aluminum. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3526142] All rights reserved.