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Electrochemical and Solid State Letters, Vol.14, No.8, H326-H329, 2011
Die-to-Die Adhesive Bonding Procedure for Evanescently-Coupled Photonic Devices
Recently demonstrated evanescent hybrid III-V/Si lasers are mostly based on molecular bonding of a III-V die on an SOI photonic wafer. This procedure requires ultra-clean and smooth bonding surfaces and might be difficult to implement in an industry-scale fabrication process. As an alternative, we present a die-to-die adhesive bonding procedure, using a DVS-BCB polymer. We achieved less than 100 nm-thick bonding layers that enable evanescent coupling between III-V and silicon. The process shows good robustness and bonding strength, with a break-down shear stress of 2 MPa. The process can be scaled-up to a multiple die-to-wafer bonding procedure. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3592267] All rights reserved.
Keywords:adhesive bonding;elemental semiconductors;III-V semiconductors;optical waveguides;photonic crystals;silicon