In this study, temperature-dependent current-voltage characteristics and electroluminescence (EL) spectra of GaN/InGaN multiple-quantum well light-emitting diodes (LEDs), which were sliced down to a few micrometers by focused ion beam technique, were researched. Compared with electrical property of broad-area LEDs, relatively larger recombination current in the temperature-dependent current-voltage (I-V) characteristics of slice LEDs was observed, indicating that most of defects created by ion damage were activated under elevated temperatures. However, approximately constant peak wavelength of slice LEDs at high current density is attributed to the competition effects of charge screening and joule heating. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594750] All rights reserved.