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Electrochemical and Solid State Letters, Vol.14, No.9, D99-D101, 2011
Aqueous, Room Temperature Electrochemical Deposition of Compact Si Films
We report room temperature deposition of compact Si films onto 6061 Al alloy from aqueous solutions containing 10 mM HF and 20 mM Na2SiF6 in 80 wt % formic acid (HCO2H) by a combination of galvanic and electroless deposition. Deposition for 30 h. yields a 7-10 mu m thick, dark grey Si thin film that does not change color upon exposure to air. Elemental analysis demonstrates that the as-deposited film contains 2-3 atom % Al, 4-5 atom % Cu, and 92-94 atom % Si. We believe that this is the first report of aqueous, room temperature deposition of thick, compact Si films. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3605307] All rights reserved.
Keywords:electrodeposition;electroless deposition;elemental semiconductors;semiconductor growth;semiconductor thin films;silicon