The local order of amorphous Ge2Sb2Te5 films (50 nm) prepared by sputtering (AD), melt quenching (MQ), or ion irradiation (II) has been probed by EXAFS and Raman spectroscopy. The Ge K edge of the AD sample shows a stronger contribution from homopolar Ge-Ge bonds with respect to irradiated films. Raman spectroscopy measurements indicate a greater abundance of homopolar Te-Te bonds in AD film with respect to MQ and II. Irradiation of deposited amorphous GST films results in a reduction of "wrong" homopolar bonds. This variation is probably the origin of the faster crystallization speed of MQ and II amorphous samples. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.019112esl] All rights reserved.