Cu1.95Se films were fabricated by electrophoresis deposition (EPD) with Cu1.95Se nanocrystals synthesized by the one-pot solution-phase process. The resistivity (7.64 x 10(-3) Omega-cm), carrier concentration (1.07 x 10(20) cm(-3)), and mobility [7.62 cm(2)(vs)(-1)] of Cu1.95Se film fabricated at an EPD voltage of 30 V were an improvement on that of Cu1.95Se film fabricated at an EPD voltage of 70 V, which can be attributed to the higher density (packing density = 52.4%) of the film fabricated at 30 V. The EPD-growth method has high potential for fabrication of non-vacuum, room-temperature-grown Cu2-xSe films. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.001201esl] All rights reserved.