CuSbSe2 thin films were prepared by one-step electrodeposition and rapid thermal annealing. The suitable deposition potential is determined to be about -0.40 V vs. SCE combining with linear sweep voltammetry and composition analysis. X-ray diffraction results indicate that the as-deposited thin film is amorphous and the annealed film shows a polycrystalline nature with orthorhombic structure and improved crystallinity. The annealed film exhibits an optical absorption coefficient of higher than 7x10(4) cm(-1), an optical band gap of 1.10 +/- 0.01 eV, p-type conductivity and a carrier concentration of 5.8x10(17) cm(-3). These characteristics reported here indicate that CuSbSe2 has potential in photovoltaic applications. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.007202esl] All rights reserved.