We report the effects of oxygen flow rate on the electrical properties of transparent silicon oxynitride (SiON)/Ag/SiON multilayer films, whose layers were formed via continuous sputtering. The SiON/Ag/SiON multilayer that was sputtered at low oxygen flow rates (below 0.6 sccm) showed metallic conduction (d rho/dT > 0) with a resistivity of 2.013 x 10(-4) Ohm-cm, while SiON/Ag/SiON film grown at high oxygen flow rates exhibited insulating behavior. These opposing electrical behaviors are related to the transition of the inserted Ag layer from a continuous layer to a layer of randomly disconnected islands with increasing oxygen flow rate. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.009202esl] All rights reserved.