Growth of InGaN alloy using hydride vapor phase epitaxy (HVPE) was investigated. Thermodynamic analysis was performed, taking account of the source zones. It was found that InCl(3) and GaCl(3), which are known to be essential for appreciable InGaN growth by HVPE, could be generated preferentially at the source zone by using a group-Ill metal and Cl(2) gas. The analysis for the growth zone revealed that a significantly large driving force for both InN and GaN deposition is possible. The calculated vapor-solid distribution was close to a linear relationship by using a high V/III ratio, inert carrier gas, and high temperature. These facts suggest that an InGaN thick layer can be grown with a high growth rate and enough controllability of solid composition by employing InCl(3) and GaCl(3) precursors. (C) 2010 Elsevier B.V. All rights reserved.