Highly oriented lead-free piezoelectric NaNbO3-BaTiO3 (NN-BT) thin films have been fabricated by a chemical solution deposition method. Alkoxy-derived 1.0 and 3.0 mol% Mn-doped 0.95NaNbO(3)-0.05BaTiO(3) thin films directly crystallized into a perovskite phase with a (1 0 0) preferred orientation on Pt(1 0 0)/MgO(1 0 0) substrates at 650 degrees C. The three-dimensional relationship between NN-BT(1 0 0) and Pt(1 0 0)/MgO(1 0 0) is confirmed by the fourfold symmetry of the pole figure. The fourfold symmetry indicates that synthesized films are oriented in both the c and a, b directions on the Pt(1 0 0) surface. The (1 0 0)-oriented Mn-doped 0.95NaNbO(3)-0.05BaTiO(3) thin films showed typical ferroelectric polarization (P)-electric field (E) hysteresis and field-induced displacement curves at room temperature. The remanent polarization and coercive field values of the oriented 1.0 and 3.0 mol% Mn-doped 0.95NaNbO(3)-0.05BaTiO(3) films were 10.4, 11.6 mu C/cm(2) and 62, 54 kV/cm, respectively. Furthermore, from the slope of the field-induced butterfly loop characterized using a scanning probe microscopy, the effective piezoelectric coefficient (AFM-d(33)) of the films was found to be approximately 35-50 pm/V. (C) 2010 Elsevier B.V. All rights reserved.