Journal of Crystal Growth, Vol.323, No.1, 9-12, 2011
Area selective epitaxy of In As on GaAs(001) and GaAs(111)A by migration enhanced epitaxy
Area selective epitaxy of InAs on semi-insulating GaAs(0 0 1) and GaAs(1 1 1)A substrates masked by SiO(2) has been investigated by using migration enhanced epitaxy (MEE). Successful area selective epitaxy has been achieved in an optimized substrate temperature range 460 degrees C
Keywords:Nanostructures;Migration enhanced epitaxy;Molecular beam epitaxy;Semiconducting indium compounds