X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Letoublon A; Guo W; Cornet C; Boulle A; Veron M; Bondi A; Durand O; Rohel T; Dehaese O; Chevalier N; Bertru N; Le Corre A

Journal of Crystal Growth, Vol.323, No.1, 409-412, 2011

DOI10.1016/j.jcrysgro.2010.10.137 Export Citation

X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Letoublon A, Guo W, Cornet C, Boulle A, Veron M, Bondi A, Durand O, Rohel T, Dehaese O, Chevalier N, Bertru N, Le Corre A

90 and 20 nm thick GaP layers on Si substrate grown by various MBE growth modes are studied. A complete analysis is performed using AFM, TEM imaging and X-ray diffraction giving crucial information on structural defects properties and here particularly on antiphase domains. Thermodynamic evolution of antiphase boundaries is then discussed. (C) 2010 Elsevier B.V. All rights reserved.

Keywords:X-ray diffraction;Planar defects;Molecular beam epitaxy;Semiconducting III-V materials;Semiconducting silicon