Power scalable 2.5 mu m (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy

Paajaste J; Koskinen R; Nikkinen J; Suomalainen S; Okhotnikov OG

Journal of Crystal Growth, Vol.323, No.1, 454-456, 2011

DOI10.1016/j.jcrysgro.2010.11.073 Export Citation

Power scalable 2.5 mu m (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy

Paajaste J, Koskinen R, Nikkinen J, Suomalainen S, Okhotnikov OG

We demonstrate first GaSb-based semiconductor disk laser (SDL) emitting 0.6 W of output power at 2.5 mu m. A gain structure comprising 15 strained In(0.35)Ga(0.65)As(0.09)Sb(0.91) quantum wells sandwiched between Al(0.35)Ga(0.65)As(0.035)Sb(0.965) barriers was grown by molecular beam epitaxy on (100) n-doped GaSb substrate. SDL demonstrates promising potential for power scaling and wavelength tuning. (C) 2010 Elsevier B.V. All rights reserved.

Keywords:Molecular beam epitaxy;Antimonides;Semiconducting III-V materials;Infrared devices