Journal of Crystal Growth, Vol.324, No.1, 22-25, 2011
Characterization of detector-grade CdZnTe:Al crystals obtained by annealing
Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D(0),X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and mu tau value of 1.18 X 10(-3) cm(2)/V had the best detector performance. (C) 2011 Elsevier B.V. All rights reserved.