In this study, we propose the fabrication of amorphous SrInZnO (SIZO) thin film transistors (TFTs) using a solution process. To analyze the effects of Sr incorporation and annealing temperature on solution-processed amorphous SIZO TFTs, Hall measurements, thermogravimetry-differential thermal analysis, transmittance measurements, and X-ray diffraction were performed. The experimental results showed that the increased addition of Sr to the IZO system resulted in suppression of carrier generation. Additionally, as the annealing temperature was increased from 300 to 500 degrees C, the TFT showed increased performance. At optimized conditions (20 at%, 500 degrees C, 2 h) for SIZO TFTs, we achieved a saturation mobility of 0.34 cm(2)/Vs, an on/off ratio of 4.54 x 10(6), a threshold voltage of 3.25 V, and a subthreshold swing of 0.61 V/decade. (C) 2011 Elsevier B.V. All rights reserved.