The potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of Al-doped single-crystalline 3C-SiC epilayers on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 degrees C using a conventional low-pressure chemical vapor deposition reactor. Al atomic concentration in the range of 2.8 x 10(19) to 2.1 x 10(20) cm(-3), proportional to the supply volume of trimethylaluminium, is experimentally demonstrated. A doping mechanism, based on the supply sequence of precursors and reactor pressure, is proposed. (C) 2011 Elsevier B.V. All rights reserved.