We investigated the effect of high flow rates (> 10(-5) mol/min) of metalorganic precursors on compositional evolution in indium phosphide antimonide (InP1-xSbx) nanowires grown via chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates maintained at similar to 360 degrees C. The as-grown nanowire morphology, composition, and crystallinity are determined using scanning and transmission electron microscopies, selected-area electron diffraction, and x-ray energy dispersive spectroscopy. For all of the precursor flow rates, we obtain zinc blende structured InP1-xSbx wires that are tapered with wider tops, narrower bases, and In-rich In-Sb alloy tips-characteristic of the vapor-liquid-solid process. The Sb content within the InP1-xSbx wires is found to increase non-linearly with increasing Sb precursor flow rate. At the interfaces between the In-Sb alloy tips and the InP1-xSbx nanowires, we observe single-crystalline wurtzite-structured InSb segments whose volumes depend on the Sb precursor flow rate. We attribute this phenomenon to the rapid crystallization of InSb during cooling of the Sb-rich In-Sb alloy droplets. (C) 2011 Elsevier B.V. All rights reserved.