Nanocrystalline compound semiconductor Cadmium Selenide was synthesized by the solvothermal method using Cd(NO(3))(2)center dot 4H(2)O and Se metal granules. The synthesized nanocrystalline CdSe particles were subjected to vacuum annealing at 450 degrees C to maintain the hexagonal phase. The as synthesized and annealed powders were analyzed using XRD, SEM, EDX and DTA. The X-ray diffraction pattern of the as synthesized powder shows cubic phase, whereas the 450 degrees C annealed CdSe powder exhibits hexagonal phase. The annealed nanocrystalline CdSe was pelletized using hydraulic pressure of 5 ton and used to deposit thin films at different substrate temperature like Room Temperature (RT), 150, 250, 350 and 450 degrees C by thermal evaporation using glass as substrate. The deposited films were subjected to XRD, SEM, EDX, UV-vis, Photoluminescence, Raman Spectroscopy and Hall Effect measurement to study their properties. The thickness of the films was measured with thickness profilometer. The thermally deposited CdSe films exhibit the hexagonal structure with n-type conductivity. (C) 2011 Elsevier B.V. All rights reserved.