We have investigated the kinetics behaviors of iron-boron pair generation in photovoltaic Czochralski silicon with germanium doping in this paper. It is found that the activation energies of iron-boron pair association and dissociation in germanium-doped silicon are 0.67 and 1.26 eV, respectively, both larger than those in conventional CZ silicon. The pre-exponential factors are also increased by one order of magnitude. Experimental results and theoretical calculations both suggest that germanium can not only improve the diffusion barrier of iron, but also increase the capture radius of boron for iron. (C) 2012 Elsevier B.V. All rights reserved.