Velocity of crystal growth of SiC in a process of solution growth was studied on the basis of a global model of heat and mass transfer in conjunction with a phase diagram of the Si-C system. The growth rate was estimated by flux of carbon to a seed crystal. The results of calculation showed that growth velocity was increased when temperature of a seed crystal was increased. The temperature dependence of growth velocity was mainly determined by the phase diagram of the Si-C system, although the flow pattern was slightly modified by changing temperature distribution in the furnace. (C) 2012 Elsevier B.V. All rights reserved.