0.89(Na0.5Bi0.5)TiO3-0.11BaTiO(3), (BNT-BT0.11) thin film was fabricated by sol-gel/spin coating process, on platinized silicon wafer. Perovskite structure with random orientation of crystallites has been obtained at 700 A degrees C. Piezoelectric activity of BNT-BT0.11 thin film was detected using piezoresponse force microscopy (PFM). Effective piezoelectric coefficient d (33eff) of such film, recorded at 5 V applied dc voltage, was similar to 29 pm/V, which is similar to other BNT-BT (x) thin films. The complex refractive index and dielectric function of BNT-BT0.11 thin films were also investigated. The high leakage current density significantly influences the dielectric, ferroelectric, and piezoelectric properties of the BNT-BT0.11 films.