Cadmium thiogallate CdGa2S4 thin films were prepared using a conventional thermal evaporation technique. The dark electrical resistivity calculations were carried out at different elevated temperatures in the range 303-423 K and in thickness range 235-457 nm. The ac conductivity and dielectric properties of CdGa2S4 film with thickness 457 nm has been studied as a function of temperature in the range from 303 to 383 K and in frequency range from 174 Hz to 1.4 MHz. The experimental results indicate that sigma(ac)(omega) is proportional to omega (s) and s ranges from 0.674 to 0.804. It was found that s increases by increasing temperature. The results obtained are discussed in terms of the non overlapping small polaron tunneling model. The dielectric constant (epsilon') and dielectric loss (epsilon aEuro(3)) were found to be decreased by increasing frequency and increased by increasing temperature. The maximum barrier height (W (m)) was estimated from the analysis of the dielectric loss (epsilon aEuro(3)) according to Giuntini's equation. Its value for the as-deposited films was found to be 0.294 eV.