Vanadium dioxide (VO(2)) thin films have been shown to undergo a rapid electronic phase transition near 70 degrees C from a semiconductor to a metal, making it an interesting candidate for exploring potential application in high speed electronic devices such as optical switches, tunable capacitors, and field effect transistors. A critical aspect of lithographic fabrication in devices utilizing electric field effects in VO(2) is the ability to grow VO(2) over thin dielectric films. In this article, we study the properties of VO(2) grown on thin films of Yttria-Stabilized Zirconia (YSZ). Near room temperature, YSZ is a good insulator with a high dielectric constant (epsilon(r) > 25). We demonstrate the sputter growth of polycrystalline VO(2) on YSZ thin films, showing a three order resistivity transition near 70 degrees C with transition and hysteresis widths of approximately 7 degrees C each. We examine the relationship between chemical composition and transition characteristics of mixed phase vanadium oxide films. We investigate changes in composition induced by low temperature post-deposition annealing in oxidizing and reducing atmospheres, and report their effects on electronic properties.