It is the objective of this letter to respond to the comments on the paper entitled "Enhancing the Photovoltaic Effect in the Infrared Region by Germanium Quantum Dots Inserted in the Intrinsic Region of a Si p-i-n Diode with Nanostructure". Evidence is presented to show that the comments are unfounded and contrary to the truth. Although the authors were funded to carry out specific research, they provided some data taken from their already published work.