Journal of Materials Science, Vol.47, No.15, 5833-5844, 2012
Influence of annealing on the surface semiconductive and photoconductive properties of nanostructured cadmium sulfide thin films
Nanostructured cadmium sulfide (CdS) thin films, prepared by chemical bath deposition (CBD) method, were annealed at different temperatures in air. Surface dark and photoconduction properties of the nanostructured CdS thin films were studied as a function of bias voltage and sample cell temperature using surface type cell configurations. Photoresponse, monitored by photoconductivity, of the films was observed to be controllable by annealing of the films, showing maximum photoresponse for the films annealed at 300 A degrees C. In contrast to the reported spectral response/photoresponse of bulk CdS mainly in the visible range, the nanostructured CdS thin films after annealing have shown photoresponse predominantly in the UV range indicating the suitability of these thin films for photodetection in the UV range. Photoconductivity of these thin films has been studied as a function of the intensity ( (B)) of light. The gamma (gamma) values which represent the characteristics of the photoconducting systems have been found to depend on the annealing temperature. Studies on the photoconductivity versus bias voltage for the CdS thin films annealed at different temperatures were carried out for both monochromatic and polychromatic light. Such studies have indicated that nanostructured CdS thin films could be useful for solar cells.