The electrochemical properties of a metallosupramolecular network that undergoes reversible redox chemistry on indium-tin oxide (ITO)-coated glass substrates have been investigated 1 he redox-active osmium complexes arc electrochemically accessible even for films with a thickness > 15 nm The electrochemical dart col relates well with our previously observed self-propagating growth process for which the election density for the assemblies remains constant during film growth Electron transfer rate constants obtained by potential step chronoamperometry experiments suggest an exceptionally low attenuation factor of beta of 0 013 +/- 0 001 angstrom(-1) However the Intrinsically porous nature of the assembly could be to a large extent or even entirely responsible for such a low value