We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and poly-crystalline WO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the WO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, Xray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm(2) V-1 s(-1) (T-anneal = 300 degrees C) and 5.0 cm(2) V-1 s(-1) (T-anneal = 250 degrees C) for 2 V operation.