Fullerene crystals or films have drawn much interest because they are good candidates for use in the construction of electronic devices. The results of theoretical calculations revealed that the conductivity properties of I-h-C-80 endohedral metallofullerenes (EMFs) vary depending on the encapsulated metal species. We experimentally investigated the solid-state structures and charge-carrier mobilities of I-h-C-80 EMFs La-2@C-80, Sc3N@C-80, and Sc3C2@C-80. The thin film of Sc3C2@C-80 exhibits a high electron mobility mu = 0.13 cm(2) V-1 s(-1) under normal temperature and atmospheric pressure, as determined using flash-photolysis time-resolved microwave conductivity measurements. This electron mobility is 2 orders of magnitude higher than the mobility of La-2@C-80 or Sc3N@C-80.