The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: asdeposited, annealed at 300 degrees C, and annealed at 600 degrees C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300 degrees C and crystalline at 600 degrees C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600 degrees C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization. (C) 2011 The Electrochemical Society. [DOI:10.1149/1.3585777] All rights reserved.