A p-type semiconductor CuO film with a bandgap energy of 1.4 eV has been prepared by anodic electrodeposition in a basic aqueous solution containing copper nitrate hydrate and ammonium nitrate at 297 K, and the structural, optical, and electrical characterizations were carried out. The randomly-oriented CuO film prepared on a transparent conductive glass substrate showed electrical characteristics of a 1.26 x 10(3) Omega cm in resistivity, 2.11 x 10(16) cm(-3) in carrier concentration, and 0.234 cm(2) V-1 s(-1) in mobility, and a slight photocurrent generation could be observed during light irradiation. The (002)-oriented CuO film could be prepared on the (111)-oriented Au/Si wafer substrate and possessed an excellent photoactivity of a large photocurrent density and quick response compared to those for the randomly oriented CuO film. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3614408] All rights reserved.