화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.158, No.9, G203-G206, 2011
Broadband Near-Infrared Luminescence from gamma-ray Irradiated Bismuth-Doped Y4GeO8 Crystals
Broadband near-infrared emission centered at 1155 nm with full width at half maximum over 300 nm has been observed in gamma-ray irradiated bismuth-doped Y4GeO8 crystals. The luminescence was bleached completely after thermal treatment at 350 degrees C for 2 h. Absorption spectra, electron spin resonance spectra, Raman spectra, excitation and emission spectra indicate that valence state change of bismuth was induced by gamma-ray irradiation, and P-3(1) -> P-3(0) transition of Bi+ ions is responsible for the near-infrared emission. The effect of Bi concentration on the luminescence properties of gamma-ray irradiated samples was also discussed. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3607428] All rights reserved.