The flexible nonvolatile memory thin-film transistor (F-MTFT) is demonstrated. The gate stack is composed of ferroelectric poly(vinylidene fluoride-trifluoroethylene) gate insulator and ZnO semiconducting channel. All the processes are performed below 150 degrees C on a poly(ethylene naphthalate) substrate. The ferroelectric field-effect-driven memory window and the on/off ratio of the fabricated F-MTFT were 7.8 V and 10(8), respectively. These behaviors did not show so marked degradations at bending situations with a curvature radius of 0.97 cm and after repetitive bendings of 20,000 cycles. The programmed on/off ratio was initially 6.6 x 10(5) and retained to be approximately 130 after a lapse of 15,000 s. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3609842] All rights reserved.