We have observed that a polyvinyl alcohol (PVA) brush-process generates many particles when there is a large friction force between the brush and a Si wafer surface terminated by hydrogen. PVA brush-based processes are widely used as a post chemical mechanical polishing (CMP) clean. We noted that the particles increase with the friction force between the brush and the surface. In addition, the particle size varies with the friction force. Raman spectroscopy detected a CH(2) stretching band at 2900 cm(-1), and C-C bands at 1330 cm(-1) (D band) and 1600 cm(-1) (G band). We infer that these C-C bands indicate the presence of amorphous carbon. In order to prevent a PVA brush cleaning process from producing particles, there must be a careful consideration of the scrub process parameters and the underlying surface conditions. We suggest a mechanism for the large particle generation observed by considering the zeta potential between the PVA brush bristles and the Si wafer surface. From a practical perspective, we tested the removal efficiency of the particles generated by the scrubbing process in a wet sink instead of using poly styrene latex (PSL) particles because of quick turn-around and low cost. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.041111jes] All rights reserved.