Hydrogen implantation was carried out on (001) germanium samples with doses of 3 x 10(16) cm(-2), 5 x 10(16) cm(-2) and 1 x 10(17) cm(-2) with 60 KeV, and germanium surface blistering phenomenon, raised by subsequent annealing in air in the temperature regions (200-250 degrees C for 1 x 10(17) cm(-2) and 250-350 degrees C for 3 x 10(16) cm(-2) and 5 x 10(16) cm(-2)) for distinct durations, was studied. In Arrhenius plots that reflects the onset blistering time of annealing as a function of annealing temperature, there is a break point separated the each plot into two parts with distinct activation energies (similar to 2.1 eV and similar to 0.6 eV) for 3 x 10(16) cm-2 and 5 x 10(16) cm(-2) doses. The break point seems to be similar to other known materials but the opposite turning direction of the straight-line is completely different from other known materials because it is possible to derive from the diversity of defect-hydrogen complexes in germanium. On the other hand, the simple straight-line in Arrhenius plot is generated in the temperature range from 200-250 degrees C with 1.57 eV activation energy as increasing H-implanted dose up to 1 x 10(17) cm(-2). The phenomenon of modifying blistering activation energy with H-implanted dose may be due to the mergence through the low and high activation energy because of competitive desorption of the defect-hydrogen complexes. The critical size of blisters to be exploded into craters increases with the enhancement of H-implanted dose and the rectangle-like periphery of the craters is obviously formed. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.065112jes] All rights reserved.