We suggest boron (B) and aluminum (Al) codoped ZnO (BAZO) transparent conducting thin films with high electrical stability for photovoltaic applications. The resistivity of widely used Al-doped ZnO (AZO) film decreased slightly by B doping. Above all, the resistivity of BAZO (4.9 at. % boron) increased by less than 1.5 times, whereas that of reference AZO film increased by over than 8 times after thermal annealing in atmospheric air. The carrier concentration and Hall mobility were much less degraded in BAZO films. X-ray photoelectron spectroscopy analysis showed that the peak portion related with chemisorbed oxygen at 100 nm-inside of the film was suppressed in BAZO film compared with AZO film. The B atoms would restrain the oxygen permeation into the film, which made the process of oxygen chemisorption inactive. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.002202jes] All rights reserved.