The topography of a thermally grown oxide film at the right-angled convex corner of silicon is investigated. Numerical simulations and atomic force microscopy are used to examine the top oxide surface as well as the oxide-silicon interface in the vicinity of the convex corner of silicon oxidized under different conditions. Our results show that under certain conditions the top surface of the grown oxide is not flat, but has nanoscale protrusions close to the convex corner. The effects of oxidation parameters (i.e., temperature, duration) and high-temperature annealing on the flatness of oxide surface are presented. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.005202jes] All rights reserved.