A series of Co, Ni and Co-Ni granular thin films with variable nitrogen content in the range 0-16 at.% N were prepared by electrodeposition onto aluminum substrate. The nitrogen content was varied in order to analyze its influence on the magnetoresistance. The morphology, structure and magnetic properties of electrodeposited Co, Ni and Co-Ni granular thin films were also studied as a function of the nitrogen content. The magnetoresistance (MR) ratio of Co-Ni-N granular films initially increased and then decreased when increasing the nitrogen content. The films exhibit a granular morphology, with rich in nitrogen frontiers between grains and some un-deposited sites on the aluminum substrate, which easily oxidize even during the process of preparation, favoring the spin tunneling transport. We obtained tunneling magnetoresistance (TMR) effect in the Co-Ni-N granular thin films in the range 3-159%; this large effect obtained in Co-Ni-N granular thin films makes them suitable for applications in electronics. (C) 2011 Elsevier B.V. All rights reserved.